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Picha inaweza kuwa uwakilishi.
Angalia specs kwa maelezo ya bidhaa.

IXFN82N60Q3

Stock Available Bei ya Rejea (Katika Dola za Marekani)
1+
$46.43
10+
$43.61
100+
$39.11
Mtengenezaji Nambari ya Sehemu:
IXFN82N60Q3
Mtengenezaji / Brand
IXYS
Sehemu ya Maelezo:
MOSFET N-CH 600V 66A SOT227B
Datasheets:
IXFN82N60Q3.pdf
Hali ya bure ya bure / Hali ya RoHS:
Hali:
Mpya ya awali, Stock Inapatikana.
Meli Kutoka:
Hong Kong
Njia ya Uhamisho:
DHL/Fedex/TNT/UPS

Uchunguzi Online

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Nambari ya Sehemu
Mtengenezaji
Inahitaji Wingi
Bei ya Lengo(USD)
jina la kampuni
Jina la mawasiliano
E-mail
Simu
Ujumbe
Tafadhali ingiza Msimbo wa Kuthibitisha na bofya "Wasilisha"
Nambari ya Sehemu IXFN82N60Q3
Mtengenezaji / Brand IXYS
Jamii Bidhaa za Semiconductor zilizo wazi > Transistors - FETs, MOSFET - Single
Maelezo MOSFET N-CH 600V 66A SOT227B
Hali ya bure ya bure / Hali ya RoHS: RoHS Compliant
Vgs (th) (Max) @ Id 6.5V @ 8mA
Vgs (Max) ±30V
Teknolojia MOSFET (Metal Oxide)
Duka la Kifaa cha Wasambazaji SOT-227B
Mfululizo HiPerFET™, Q3 Class
Rds On (Max) @ Id, Vgs 75mOhm @ 41A, 10V
Utoaji wa nguvu (Max) 960W (Tc)
Paket / Uchunguzi SOT-227-4, miniBLOC
Kifurushi Tube
Joto la Uendeshaji -55°C ~ 150°C (TJ)
Aina ya kuinua Chassis Mount
Capacitance Input (Ciss) (Max) @ Vds 13500 pF @ 25 V
Mlango wa Mlango (Qg) (Max) @ Vgs 275 nC @ 10 V
Aina ya FET N-Channel
Kipengele cha FET -
Dari ya Hifadhi (Max Rds On, Min Rds On) 10V
Futa kwa Chanzo Voltage (Vdss) 600 V
Sasa - Drain inayoendelea (Id) @ 25 ° C 66A (Tc)
Nambari ya bidhaa ya msingi IXFN82

Ufungaji

Tunatoa ubora wa hali ya juu, ufungaji wa ngao tuli tuli. Kwa uwazi wa 40%, inadhibitisha utambulisho rahisi wa IC (mizunguko iliyojumuishwa) na PCB's (bodi za printa). Uiminaji wa chuma uliodumu sana unaipa utendaji wa FaradayCage inayohitajika kulinda ngao hizi dhidi ya tuli.

Bidhaa zote zitapakia katika anti-tuli. Usafirishaji na ESD ulinzi wa antistatic.
Kando ya vifaa vya upakiaji vya ESD vitatumia habari ya habari yetu: Bomba la Sehemu, Bidhaa na Wingi.
Tutakagua bidhaa zote kabla ya usafirishaji, hakikisha bidhaa zote ziko katika hali nzuri na hakikisha sehemu hizo ni duka mpya la asili.
Baada ya bidhaa zote kuhakikisha kuwa hakuna shida za kufunga, tutapakia salama na tutatuma kwa kuelezea kimataifa. Inaonyesha kuchomwa na kupunguzwa kwa machozi pamoja na uadilifu mzuri wa muhuri.
Tunaweza kutoa huduma ya utoaji wa sauti ulimwenguni, kama DHLor FedEx au TNT au UPS au usambazaji mwingine kwa usafirishaji.

Usafirishaji wa Dunia na DHL / FedEx / TNT / UPS

Ada ya Usafirishaji kumbukumbu DHL / FedEx
1). Unaweza kutoa akaunti yako ya uwasilishaji kwa usafirishaji, ikiwa hauna akaunti yoyote ya usafirishaji, tunaweza kutoa udadisi wa akaunti yetu.
2). Tumia akaunti yetu kwa usafirishaji, malipo ya Usafirishaji (Rejea DHL / FedEx, Nchi tofauti zina bei tofauti.)
Malipo ya usafirishaji: (Rejea DHL na FedEX)
Uzito (KG): 0.00kg-1.00kg Bei (USD $): USD $ 60.00
Uzito (KG): 1.00kg-2.00kg Bei (USD $): USD $ 80.00
* Bei ya gharama ni kumbukumbu na DHL / FedEx. Mashtaka ya kina, tafadhali wasiliana nasi. Nchi tofauti mashtaka ya kueleza ni tofauti.



IXFN82N60Q3 maelezo ya bidhaa:

Title: IXFN82N60Q3 - A top-performing MOSFET N-CH 600V 66A SOT227B for high-power applications The IXFN82N60Q3 is an exceptional MOSFET N-CH 600V 66A SOT227B model, designed to deliver optimum performance for high-power applications. This product is a standout among similar models for its unique features and top-quality components. In this article, we will discuss the IXFN82N60Q3's features, specifications, application scenarios, and usage, along with the manufacturing process and packaging. Main features and performance parameters The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is a high-performance device that offers superior features and parameters. With an output voltage of 600V, the device has a maximum current rating of 66A. It has an accuracy rate of 1%, making it suitable for precise applications. The IXFN82N60Q3 boasts an impressive efficiency rate of 92.5%, resulting in significant power savings and reliability. Additionally, it can endure a temperature range between -55°C to 175°C. Application scenarios and usage The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is designed to be used in various electronic devices and industries, such as industrial automation, renewable energy, and electric vehicles. It is suitable for specific applications such as power modules, motor control, and welding. Furthermore, the IXFN82N60Q3 has a wide range of usage in high-power applications, ensuring superior performance and long-lasting reliability. Types of integrated circuits The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model uses integrated circuits with digital, analog, mixed signal, and RF functionalities. These integrated circuits enable the device to operate at optimal performance levels, making it an outstanding model for high-power applications. Manufacturing process The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model undergoes a complex manufacturing process, including chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, and more. This comprehensive manufacturing process guarantees that the product meets strict quality-control standards, ensuring that the product is reliable and high-performing. Packaging and testing After undergoing the complex manufacturing process, the product is packaged and tested for quality control. The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is packaged appropriately to protect the component and meet varying customer demands. Furthermore, the testing process ensures that all products meet the quality standards and are suitable for specific applications. Conclusion The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is an outstanding product that offers exceptional performance features and parameters. It is suitable for high-power applications and comes with a comprehensive manufacturing process and packaging. Investing in the IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is investing in a reliable and efficient product with a proven track record of high performance.

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