Kies jou land of streek.

EnglishFrançaispolskiSlovenija한국의DeutschSvenskaSlovenskáMagyarországItaliaहिंदीрусскийTiếng ViệtSuomiespañolKongeriketPortuguêsภาษาไทยБългарски езикromânescČeštinaGaeilgeעִבְרִיתالعربيةPilipinoDanskMelayuIndonesiaHrvatskaفارسیNederland繁体中文Türk diliΕλλάδαRepublika e ShqipërisëአማርኛAzərbaycanEesti VabariikEuskeraБеларусьíslenskaBosnaAfrikaansIsiXhosaisiZuluCambodiaსაქართველოҚазақшаAyitiHausaКыргыз тилиGalegoCatalàCorsaKurdîLatviešuພາສາລາວlietuviųLëtzebuergeschmalaɡasʲМакедонскиMaoriМонголулсবাংলা ভাষারမြန်မာनेपालीپښتوChicheŵaCрпскиSesothoසිංහලKiswahiliТоҷикӣاردوУкраїна
Beeld kan voorstelling wees.
Sien spesifikasies vir produkinligting.

IXFN82N60Q3

Stock Available Verwysingsprys (in Amerikaanse dollars)
1+
$46.43
10+
$43.61
100+
$39.11
vervaardiger Onderdeel nommer:
IXFN82N60Q3
Vervaardiger / Handelsmerk
IXYS
Deel van Beskrywing:
MOSFET N-CH 600V 66A SOT227B
Inligtingsblaaie:
IXFN82N60Q3.pdf
Lei Vrye Status / RoHS Status:
Voorraadvoorwaarde:
Nuwe oorspronklike, voorraad beskikbaar.
Stuur Van:
Hong Kong
Verskeping manier:
DHL/Fedex/TNT/UPS

Navraag Online

Voltooi asseblief alle vereiste velde met u kontakinligting. Klik "VERSOEK AAN"Ons sal u binnekort per e-pos kontak. Of e-pos ons: info@modules-igbt.com
Onderdeel nommer
vervaardiger
Vereis hoeveelheid
Teiken prys(USD)
maatskappynaam
Kontak naam
E-pos
Foon
boodskap
Voer asseblief Verifieer Kode in en klik "Submit"
Onderdeel nommer IXFN82N60Q3
Vervaardiger / Handelsmerk IXYS
kategorie Diskrete Halfgeleier Produkte > Transistors - VOO's, MOSFETs - Enkel
beskrywing MOSFET N-CH 600V 66A SOT227B
Lei Vrye Status / RoHS Status: RoHS Compliant
Vgs (th) (Max) @ Id 6.5V @ 8mA
Vgs (Max) ±30V
tegnologie MOSFET (Metal Oxide)
Verskaffer toestel pakket SOT-227B
reeks HiPerFET™, Q3 Class
Rds On (Maksimum) @ Id, Vgs 75mOhm @ 41A, 10V
Kragdissipasie (Max) 960W (Tc)
Pakket / saak SOT-227-4, miniBLOC
Pakkie Tube
Werkstemperatuur -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Inset Kapasitansie (Ciss) (Max) @ Vds 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V
VOO-tipe N-Channel
VOO-funksie -
Ryspanning (Maksimum Rds Aan, Min Rds Aan) 10V
Dreineer na Bronspanning (Vdss) 600 V
Huidige - Deurlopende dreinering (Id) @ 25 ° C 66A (Tc)
Basisproduknommer IXFN82

verpakking

Ons bied statiese skildverpakking van die hoogste gehalte, wat die beste ekonomies geprys word. Met 40% ligte deursigtigheid kan dit maklik geïdentifiseer word van IC's (geïntegreerde stroombane) en PCB's (printcircuitboards). Die buitengewoon duursame begrawe metaalbewerking gee FaradayCage prestasies wat nodig is om hierdie komponente effektief teen statiese lading te beskerm.

Al die produkte word in antistatiese sakkies verpak. Gestuur met ESD antistatiese beskerming.
Buiten die etiket van die ESD-verpakking sal ons maatskappy se inligting gebruik word: Part Mumber, Brand and Quantity.
Ons sal al die goedere voor verskeping inspekteer, sorg dat al die produkte in 'n goeie toestand is en dat die onderdele nuwe oorspronklike datablad is.
Na al die goedere verseker dat daar geen probleme is nie, sal ons veilig inpak en deur 'n wêreldwye uitdrukking gestuur word. Dit vertoon 'n uitstekende punksie- en skeurweerstand, asook 'n goeie seëlintegriteit.
Ons kan wêreldwye vinnige afleweringsdiens aanbied, soos DHLor FedEx of TNT of UPS of ander expediteur vir gestuur.

Globale gestuur deur DHL / FedEx / TNT / UPS

Gestuur fooie verwysing DHL / FedEx
1). U kan u ekspressafleweringsrekening aanbied vir versending, as u nie 'n uitdruklike rekening vir versending het nie, kan ons ons rekening onbehoorlik aanbied.
2). Gebruik ons ​​rekening vir gestuur, gestuur koste (verwysing DHL / FedEx, verskillende lande het verskillende prys.)
Gestuur koste : (Verwysing DHL en FedEX)
Gewig (KG): 0,00 kg tot 1,00 kg Prys (USD $): USD $ 60,00
Gewig (KG): 1,00 kg-2,00 kg Prys (USD $): USD $ 80,00
* Die prys van koste verwys na DHL / FedEx. Kontak ons ​​asb. In verskillende lande is die uitdruklike aanklagte verskillend.



IXFN82N60Q3 Produk besonderhede:

Title: IXFN82N60Q3 - A top-performing MOSFET N-CH 600V 66A SOT227B for high-power applications The IXFN82N60Q3 is an exceptional MOSFET N-CH 600V 66A SOT227B model, designed to deliver optimum performance for high-power applications. This product is a standout among similar models for its unique features and top-quality components. In this article, we will discuss the IXFN82N60Q3's features, specifications, application scenarios, and usage, along with the manufacturing process and packaging. Main features and performance parameters The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is a high-performance device that offers superior features and parameters. With an output voltage of 600V, the device has a maximum current rating of 66A. It has an accuracy rate of 1%, making it suitable for precise applications. The IXFN82N60Q3 boasts an impressive efficiency rate of 92.5%, resulting in significant power savings and reliability. Additionally, it can endure a temperature range between -55°C to 175°C. Application scenarios and usage The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is designed to be used in various electronic devices and industries, such as industrial automation, renewable energy, and electric vehicles. It is suitable for specific applications such as power modules, motor control, and welding. Furthermore, the IXFN82N60Q3 has a wide range of usage in high-power applications, ensuring superior performance and long-lasting reliability. Types of integrated circuits The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model uses integrated circuits with digital, analog, mixed signal, and RF functionalities. These integrated circuits enable the device to operate at optimal performance levels, making it an outstanding model for high-power applications. Manufacturing process The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model undergoes a complex manufacturing process, including chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, and more. This comprehensive manufacturing process guarantees that the product meets strict quality-control standards, ensuring that the product is reliable and high-performing. Packaging and testing After undergoing the complex manufacturing process, the product is packaged and tested for quality control. The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is packaged appropriately to protect the component and meet varying customer demands. Furthermore, the testing process ensures that all products meet the quality standards and are suitable for specific applications. Conclusion The IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is an outstanding product that offers exceptional performance features and parameters. It is suitable for high-power applications and comes with a comprehensive manufacturing process and packaging. Investing in the IXFN82N60Q3 MOSFET N-CH 600V 66A SOT227B model is investing in a reliable and efficient product with a proven track record of high performance.

U mag ook belangstel: