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Picha inaweza kuwa uwakilishi.
Angalia specs kwa maelezo ya bidhaa.

IXFN90N30

Mtengenezaji Nambari ya Sehemu:
IXFN90N30
Mtengenezaji / Brand
IXYS
Sehemu ya Maelezo:
MOSFET N-CH 300V 90A SOT-227B
Datasheets:
IXFN90N30(1).pdfIXFN90N30(2).pdf
Hali ya bure ya bure / Hali ya RoHS:
Hali:
Mpya ya awali, Stock Inapatikana.
Meli Kutoka:
Hong Kong
Njia ya Uhamisho:
DHL/Fedex/TNT/UPS

Uchunguzi Online

Tafadhali kamilisha sehemu zote zinazohitajika na habari yako ya mawasiliano.Bonyeza "SOMO LA KUTUMIA"tutawasiliana nawe kwa muda mfupi kwa barua pepe. Au tutumie barua pepe: info@modules-igbt.com
Nambari ya Sehemu
Mtengenezaji
Inahitaji Wingi
Bei ya Lengo(USD)
jina la kampuni
Jina la mawasiliano
E-mail
Simu
Ujumbe
Tafadhali ingiza Msimbo wa Kuthibitisha na bofya "Wasilisha"
Nambari ya Sehemu IXFN90N30
Mtengenezaji / Brand IXYS
Jamii Bidhaa za Semiconductor zilizo wazi > Transistors - FETs, MOSFET - Single
Maelezo MOSFET N-CH 300V 90A SOT-227B
Hali ya bure ya bure / Hali ya RoHS: RoHS Compliant
Vgs (th) (Max) @ Id 4V @ 8mA
Vgs (Max) ±20V
Teknolojia MOSFET (Metal Oxide)
Duka la Kifaa cha Wasambazaji SOT-227B
Mfululizo HiPerFET™
Rds On (Max) @ Id, Vgs 33mOhm @ 45A, 10V
Utoaji wa nguvu (Max) 560W (Tc)
Paket / Uchunguzi SOT-227-4, miniBLOC
Kifurushi Tube
Joto la Uendeshaji -55°C ~ 150°C (TJ)
Aina ya kuinua Chassis Mount
Capacitance Input (Ciss) (Max) @ Vds 10000 pF @ 25 V
Mlango wa Mlango (Qg) (Max) @ Vgs 360 nC @ 10 V
Aina ya FET N-Channel
Kipengele cha FET -
Dari ya Hifadhi (Max Rds On, Min Rds On) 10V
Futa kwa Chanzo Voltage (Vdss) 300 V
Sasa - Drain inayoendelea (Id) @ 25 ° C 90A (Tc)
Nambari ya bidhaa ya msingi IXFN90

Ufungaji

Tunatoa ubora wa hali ya juu, ufungaji wa ngao tuli tuli. Kwa uwazi wa 40%, inadhibitisha utambulisho rahisi wa IC (mizunguko iliyojumuishwa) na PCB's (bodi za printa). Uiminaji wa chuma uliodumu sana unaipa utendaji wa FaradayCage inayohitajika kulinda ngao hizi dhidi ya tuli.

Bidhaa zote zitapakia katika anti-tuli. Usafirishaji na ESD ulinzi wa antistatic.
Kando ya vifaa vya upakiaji vya ESD vitatumia habari ya habari yetu: Bomba la Sehemu, Bidhaa na Wingi.
Tutakagua bidhaa zote kabla ya usafirishaji, hakikisha bidhaa zote ziko katika hali nzuri na hakikisha sehemu hizo ni duka mpya la asili.
Baada ya bidhaa zote kuhakikisha kuwa hakuna shida za kufunga, tutapakia salama na tutatuma kwa kuelezea kimataifa. Inaonyesha kuchomwa na kupunguzwa kwa machozi pamoja na uadilifu mzuri wa muhuri.
Tunaweza kutoa huduma ya utoaji wa sauti ulimwenguni, kama DHLor FedEx au TNT au UPS au usambazaji mwingine kwa usafirishaji.

Usafirishaji wa Dunia na DHL / FedEx / TNT / UPS

Ada ya Usafirishaji kumbukumbu DHL / FedEx
1). Unaweza kutoa akaunti yako ya uwasilishaji kwa usafirishaji, ikiwa hauna akaunti yoyote ya usafirishaji, tunaweza kutoa udadisi wa akaunti yetu.
2). Tumia akaunti yetu kwa usafirishaji, malipo ya Usafirishaji (Rejea DHL / FedEx, Nchi tofauti zina bei tofauti.)
Malipo ya usafirishaji: (Rejea DHL na FedEX)
Uzito (KG): 0.00kg-1.00kg Bei (USD $): USD $ 60.00
Uzito (KG): 1.00kg-2.00kg Bei (USD $): USD $ 80.00
* Bei ya gharama ni kumbukumbu na DHL / FedEx. Mashtaka ya kina, tafadhali wasiliana nasi. Nchi tofauti mashtaka ya kueleza ni tofauti.



IXFN90N30 maelezo ya bidhaa:

IXFN90N30 MOSFET: High-Performance Discrete Semiconductor for Industrial Applications As industrial automation becomes more prevalent, the need for reliable, high-performance semiconductors continues to grow. One such semiconductor is the IXFN90N30 MOSFET, designed specifically for use in industrial applications. This article explores the main features and performance parameters of the IXFN90N30, its various application scenarios and usage, different types of integrated circuits, the complex manufacturing process, and the importance of appropriate packaging and testing. IXFN90N30: Product Model Number and Main Features The IXFN90N30 is a highly efficient, N-channel MOSFET that ensures reliable performance in industrial environments. This semiconductor features a 300V breakdown voltage, with a maximum current rating of 90A. It comes in a SOT-227B package and is designed to work at high temperatures. With its improved on-resistance, this MOSFET gives high switching efficiency, which makes it ideal for a broad range of industrial applications. Main Features and Performance Parameters The IXFN90N30 MOSFET delivers high output voltage, current, and power, making it an ideal solution for industrial power management systems. This semiconductor provides superior efficiency, accuracy, and temperature range, which enhances its performance in diverse applications. Additionally, it features low gate charge, which ensures fast switching speed and avoids overheating, making it suitable for high-frequency applications. Application Scenarios and Usage IXFN90N30 MOSFETs are designed for industrial applications such as solar power systems, uninterruptible power supplies (UPS), power inverters, and welding machines. The excellent performance of the MOSFET N-CH 300V 90A SOT-227B makes it an ideal choice for high-power, high-frequency applications in the automotive, medical, and aerospace sectors, where reliable and efficient performance is critical. Different Types of Integrated Circuits Integrated circuits are essential components of any electronic device. There are various types of integrated circuits, including digital, analog, mixed signal, and RF. The IXFN90N30 MOSFET is a mixed signal semiconductor that can provide both digital and analog signals. Digital circuits integrate Boolean functions, while analog circuits are designed to process continuous, analog signals. Mixed signal circuits combine both analog and digital signal processing. RF integrated circuits process high-frequency signals. Complex Manufacturing Process The production process for semiconductor chips involves many steps and processes, including chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, and etching. The IXFN90N30 MOSFET undergoes all these processes to ensure high performance, efficiency, and reliability. Appropriate Packaging and Testing After completion of the manufacturing process, semiconductor components go through packaging and testing to ensure they meet quality standards and work correctly. Good packaging should be dust-free, safe from moisture and oxidization, and eliminate any chance of thermal shock. Testing procedures should be rigorous to ensure the finished product performs as specified. Conclusion The IXFN90N30 MOSFET is a high-performance semiconductor that surpasses other N-channel MOSFETs. Its features, performance parameters, and manufacturing process ensure reliable and efficient performance in various industrial applications. While it finds use mainly in industrial automation, it is also found in other areas such as aerospace, medical, and automotive applications. As producers increase the adoption of automation, there is potential for growth in the market of semiconductors such as IXFN90N30 MOSFETs.

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