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IXFN90N30

Hiersteller Part Number:
IXFN90N30
Hiersteller / Mark
IXYS
Deel vun der Beschreiwung:
MOSFET N-CH 300V 90A SOT-227B
Datebanken:
IXFN90N30(1).pdfIXFN90N30(2).pdf
Bleif Free Status / RoHS Status:
Stock Konditioun:
Nei Original, Liwwer verfügbar.
Schëff Vun:
Hong Kong
Liwwerung Way:
DHL/Fedex/TNT/UPS

Enquête Online

Fëllt all noutwendeg Felder mat Ärer Kontaktinformatioun of. Klickt "SUBMIT FROT"mir kontaktéieren Iech kuerz per E-Mail. Oder E-Mail eis: info@modules-igbt.com
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Part Number IXFN90N30
Hiersteller / Mark IXYS
Kategorie Diskrete Semiconductor Products > Transistoren - FETs, MOSFET - Single
Beschreiwung MOSFET N-CH 300V 90A SOT-227B
Bleif Free Status / RoHS Status: RoHS Compliant
Vgs (th) (Max) @ Id 4V @ 8mA
Vgs (Max) ±20V
Technologie MOSFET (Metal Oxide)
Supplier Device Package SOT-227B
Serie HiPerFET™
Rds On (Max) @ Id, Vgs 33mOhm @ 45A, 10V
Power Dissipation (Max) 560W (Tc)
Package / Case SOT-227-4, miniBLOC
Package protegéieren Tube
Operatioun Temperatur -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
FET Typ N-Channel
FET Feature -
Fuert Volt (Max Rds On, Min Rds On) 10V
Entworf fir Source Voltage (Vdss) 300 V
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C 90A (Tc)
Basis Produktnummer IXFN90

Verpackung

Mir bidden déi héchst Qualitéit, wirtschaftlechste Präisser fir statesch Schildverpackungen verfügbar. Mat 40% Liicht Transparenz ass et méiglech fir einfach Identifikatioun vun den IC (integréiert Circuiten) a PCB (Printcircuit Boards). Déi extrem haltbar begruewe Metallkonstruktioun gëtt FaradayCage Performance gebraucht fir effektiv dës Componenets géint statesch Charge ze schützen.

All d'Produkter ginn an Anti-Statikbeutel verpackt. Schëff mat ESD antistatesche Schutz.
Ausserhalb vum ESD Packing Label benotzt d'Informatioun vun eiser Firma: Deel Mummer, Brand a Quantitéit.
Mir wäerten all d'Wueren virun der Versandung inspizéieren, all d'Produkter an engem gudden Zoustand sécheren an dofir suergen, datt d'Deeler nei originalmatch Dateblatt sinn.
Nodeems all d'Wuere sécher keng Probleemer Afterpacking sinn, wäerte mir sécher packen a per global Express schécken. Et weist aussergewéinlech Punktur an Tréine-Widderstand zesumme mat enger gudder Dicht Integritéit.
Mir kënnen weltwäit Express-Liwwerservice ubidden, sou wéi DHLor FedEx oder TNT oder UPS oder aner Forwarder fir Sendung.

Global Sendung vum DHL / FedEx / TNT / UPS

Versandkäschten iwwer Referenz DHL / FedEx
1). Dir kënnt Ären Express Liwwerungskont fir de Versand offréieren, wann Dir keen express Kont fir Liwwerung hutt, kënne mir eise Konto inadvance ubidden.
2). Benotzt eise Kont fir d'Versand, Versandkäschten (Referenz DHL / FedEx, Verschidde Länner hu verschidde Präis.)
Versandkäschten : (Referenz DHL a FedEX)
Gewiicht (KG): 0,00 kg-1,00 kg Präis (USD $): USD $ 60.00
Gewiicht (KG): 1,00 kg -2,00 kg Präis (USD $): USD $ 80,00
* De Präis vum Käschte gëtt Referenz mat DHL / FedEx. D'Detailer Käschten, kontaktéiert eis. Verschidde Land d'Ausdréck Käschten sinn anescht.



IXFN90N30 Produktdetailer:

IXFN90N30 MOSFET: High-Performance Discrete Semiconductor for Industrial Applications As industrial automation becomes more prevalent, the need for reliable, high-performance semiconductors continues to grow. One such semiconductor is the IXFN90N30 MOSFET, designed specifically for use in industrial applications. This article explores the main features and performance parameters of the IXFN90N30, its various application scenarios and usage, different types of integrated circuits, the complex manufacturing process, and the importance of appropriate packaging and testing. IXFN90N30: Product Model Number and Main Features The IXFN90N30 is a highly efficient, N-channel MOSFET that ensures reliable performance in industrial environments. This semiconductor features a 300V breakdown voltage, with a maximum current rating of 90A. It comes in a SOT-227B package and is designed to work at high temperatures. With its improved on-resistance, this MOSFET gives high switching efficiency, which makes it ideal for a broad range of industrial applications. Main Features and Performance Parameters The IXFN90N30 MOSFET delivers high output voltage, current, and power, making it an ideal solution for industrial power management systems. This semiconductor provides superior efficiency, accuracy, and temperature range, which enhances its performance in diverse applications. Additionally, it features low gate charge, which ensures fast switching speed and avoids overheating, making it suitable for high-frequency applications. Application Scenarios and Usage IXFN90N30 MOSFETs are designed for industrial applications such as solar power systems, uninterruptible power supplies (UPS), power inverters, and welding machines. The excellent performance of the MOSFET N-CH 300V 90A SOT-227B makes it an ideal choice for high-power, high-frequency applications in the automotive, medical, and aerospace sectors, where reliable and efficient performance is critical. Different Types of Integrated Circuits Integrated circuits are essential components of any electronic device. There are various types of integrated circuits, including digital, analog, mixed signal, and RF. The IXFN90N30 MOSFET is a mixed signal semiconductor that can provide both digital and analog signals. Digital circuits integrate Boolean functions, while analog circuits are designed to process continuous, analog signals. Mixed signal circuits combine both analog and digital signal processing. RF integrated circuits process high-frequency signals. Complex Manufacturing Process The production process for semiconductor chips involves many steps and processes, including chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, and etching. The IXFN90N30 MOSFET undergoes all these processes to ensure high performance, efficiency, and reliability. Appropriate Packaging and Testing After completion of the manufacturing process, semiconductor components go through packaging and testing to ensure they meet quality standards and work correctly. Good packaging should be dust-free, safe from moisture and oxidization, and eliminate any chance of thermal shock. Testing procedures should be rigorous to ensure the finished product performs as specified. Conclusion The IXFN90N30 MOSFET is a high-performance semiconductor that surpasses other N-channel MOSFETs. Its features, performance parameters, and manufacturing process ensure reliable and efficient performance in various industrial applications. While it finds use mainly in industrial automation, it is also found in other areas such as aerospace, medical, and automotive applications. As producers increase the adoption of automation, there is potential for growth in the market of semiconductors such as IXFN90N30 MOSFETs.

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