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IXFN90N30

Manifakti Nimewo Pati:
IXFN90N30
Manifakti / Brand
IXYS
Pati nan Deskripsyon:
MOSFET N-CH 300V 90A SOT-227B
Datasheets:
IXFN90N30(1).pdfIXFN90N30(2).pdf
Plon gratis Status / RoHS Status:
Stock kondisyon:
Nouvo orijinal, Stock Disponib.
Bato de:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

Enquiry sou entènèt

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Nimewo Pati
Manifakti
Mande Kantite
Pri Sib(USD)
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Mesaj
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Nimewo Pati IXFN90N30
Manifakti / Brand IXYS
Kategori Diskresyon semiconductor pwodwi > Transistors - FETs, MOSFETs - Single
Deskripsyon MOSFET N-CH 300V 90A SOT-227B
Plon gratis Status / RoHS Status: RoHS Compliant
Vgs (th) (Max) @ Id 4V @ 8mA
Vgs (Max) ±20V
Teknoloji MOSFET (Metal Oxide)
Founisè Aparèy pake SOT-227B
Seri HiPerFET™
Rds Sou (Max) @ Id, Vgs 33mOhm @ 45A, 10V
Dissipasyon pouvwa (Max) 560W (Tc)
Pake / Ka SOT-227-4, miniBLOC
Pakèt Tube
Operating Tanperati -55°C ~ 150°C (TJ)
Mounting Kalite Chassis Mount
Kapasite Antre (Ciss) (Max) @ Vds 10000 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
Fèt tip N-Channel
FET Feature -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V
Drenaj Sous Voltage (Vdss) 300 V
Kouran - Kontini Drain (Id) @ 25 ° C 90A (Tc)
Nimewo pwodwi baz IXFN90

Anbalaj

Nou ofri bon jan kalite ki pi wo a, ki pi ekonomikman pri anbalaj pwoteksyon estatik ki disponib. Avèk 40% transparans limyè, itallows pou idantifikasyon fasil nan IC a (sikwi entegre) ak PCB a (printscircuit ankadreman). Tretman ki pi dirab ki gen antye metal yo bay pèfòmans FaradayCage ki nesesè pou yo byen pwoteje eleman sa yo kont chaj otomatik yo.

Tout pwodwi yo pral procesna nan anti-staticbag. Bato ak pwoteksyon antistatik ESD.
Eksepte pake ESD anbalaj a pral sèvi ak enfòmasyon konpayi nou an: Pati mòmon, mak ak Kantite.
Nou pral enspekte tout byen yo anvan chajman, asire tout pwodwi yo nan bon kondisyon epi asire ke pati yo se nouvo orijinalmatch fichye.
Apre tout machandiz yo asire pa gen okenn pwoblèm afterpacking, nou pral procesna san danje epi voye pa eksprime mondyal. Li exhibitsexcellent bon rezistans ak dlo ansanm ak entegrite bon sele.
Nou ka ofri sèvis livrezon atravè lemond eksprime, tankou DHLor FedEx oswa TNT oswa UPS oswa lòt komisè pou chajman.

Global Shipment pa DHL / FedEx / TNT / UPS

Frè anbak referans DHL / FedEx
1). Ou ka ofri eksprime kont livrezon ou pou chajman, si ou pa gen okenn kont eksprime pou chajman, nou ka ofri inadvance kont nou an.
2). Sèvi ak kont nou pou chajman, chaj chajman (Referans DHL / FedEx, diferan peyi gen pri diferan.)
Chaj chajman: (Referans DHL ak FedEx)
Pwa (KG): 0.00kg-1.00kg Pri (USD $): USD $ 60.00
Pwa (KG): 1.00kg-2.00kg Pri (USD $): USD $ 80.00
* Pri a nan pri a se referans ak DHL / FedEx. Chaj detay yo, tanpri kontakte nou. Diferan peyi chaj eksprime yo diferan.



IXFN90N30 Pwodwi Detay yo:

IXFN90N30 MOSFET: High-Performance Discrete Semiconductor for Industrial Applications As industrial automation becomes more prevalent, the need for reliable, high-performance semiconductors continues to grow. One such semiconductor is the IXFN90N30 MOSFET, designed specifically for use in industrial applications. This article explores the main features and performance parameters of the IXFN90N30, its various application scenarios and usage, different types of integrated circuits, the complex manufacturing process, and the importance of appropriate packaging and testing. IXFN90N30: Product Model Number and Main Features The IXFN90N30 is a highly efficient, N-channel MOSFET that ensures reliable performance in industrial environments. This semiconductor features a 300V breakdown voltage, with a maximum current rating of 90A. It comes in a SOT-227B package and is designed to work at high temperatures. With its improved on-resistance, this MOSFET gives high switching efficiency, which makes it ideal for a broad range of industrial applications. Main Features and Performance Parameters The IXFN90N30 MOSFET delivers high output voltage, current, and power, making it an ideal solution for industrial power management systems. This semiconductor provides superior efficiency, accuracy, and temperature range, which enhances its performance in diverse applications. Additionally, it features low gate charge, which ensures fast switching speed and avoids overheating, making it suitable for high-frequency applications. Application Scenarios and Usage IXFN90N30 MOSFETs are designed for industrial applications such as solar power systems, uninterruptible power supplies (UPS), power inverters, and welding machines. The excellent performance of the MOSFET N-CH 300V 90A SOT-227B makes it an ideal choice for high-power, high-frequency applications in the automotive, medical, and aerospace sectors, where reliable and efficient performance is critical. Different Types of Integrated Circuits Integrated circuits are essential components of any electronic device. There are various types of integrated circuits, including digital, analog, mixed signal, and RF. The IXFN90N30 MOSFET is a mixed signal semiconductor that can provide both digital and analog signals. Digital circuits integrate Boolean functions, while analog circuits are designed to process continuous, analog signals. Mixed signal circuits combine both analog and digital signal processing. RF integrated circuits process high-frequency signals. Complex Manufacturing Process The production process for semiconductor chips involves many steps and processes, including chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, and etching. The IXFN90N30 MOSFET undergoes all these processes to ensure high performance, efficiency, and reliability. Appropriate Packaging and Testing After completion of the manufacturing process, semiconductor components go through packaging and testing to ensure they meet quality standards and work correctly. Good packaging should be dust-free, safe from moisture and oxidization, and eliminate any chance of thermal shock. Testing procedures should be rigorous to ensure the finished product performs as specified. Conclusion The IXFN90N30 MOSFET is a high-performance semiconductor that surpasses other N-channel MOSFETs. Its features, performance parameters, and manufacturing process ensure reliable and efficient performance in various industrial applications. While it finds use mainly in industrial automation, it is also found in other areas such as aerospace, medical, and automotive applications. As producers increase the adoption of automation, there is potential for growth in the market of semiconductors such as IXFN90N30 MOSFETs.

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