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IXYS
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IXFT30N50

Manifakti Nimewo Pati:
IXFT30N50
Manifakti / Brand
IXYS
Pati nan Deskripsyon:
MOSFET N-CH 500V 30A TO268
Datasheets:
Plon gratis Status / RoHS Status:
Stock kondisyon:
Nouvo orijinal, Stock Disponib.
Bato de:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

Enquiry sou entènèt

Tanpri ranpli tout jaden obligatwa yo ak enfòmasyon kontak ou.Klike sou "DEMANDE YO"Nou pral kontakte ou yon ti tan nan imèl. Oswa voye yon imèl nou: info@modules-igbt.com
Nimewo Pati
Manifakti
Mande Kantite
Pri Sib(USD)
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Kontakte Non
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Telefòn
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Nimewo Pati IXFT30N50
Manifakti / Brand IXYS
Kategori Diskresyon semiconductor pwodwi > Transistors - FETs, MOSFETs - Single
Deskripsyon MOSFET N-CH 500V 30A TO268
Plon gratis Status / RoHS Status: RoHS Compliant
Vgs (th) (Max) @ Id 4V @ 4mA
Vgs (Max) ±20V
Teknoloji MOSFET (Metal Oxide)
Founisè Aparèy pake TO-268AA
Seri HiPerFET™
Rds Sou (Max) @ Id, Vgs 160mOhm @ 15A, 10V
Dissipasyon pouvwa (Max) 360W (Tc)
Pake / Ka TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pakèt Tube
Operating Tanperati -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 5700 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Fèt tip N-Channel
FET Feature -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V
Drenaj Sous Voltage (Vdss) 500 V
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Tc)
Nimewo pwodwi baz IXFT30

Anbalaj

Nou ofri bon jan kalite ki pi wo a, ki pi ekonomikman pri anbalaj pwoteksyon estatik ki disponib. Avèk 40% transparans limyè, itallows pou idantifikasyon fasil nan IC a (sikwi entegre) ak PCB a (printscircuit ankadreman). Tretman ki pi dirab ki gen antye metal yo bay pèfòmans FaradayCage ki nesesè pou yo byen pwoteje eleman sa yo kont chaj otomatik yo.

Tout pwodwi yo pral procesna nan anti-staticbag. Bato ak pwoteksyon antistatik ESD.
Eksepte pake ESD anbalaj a pral sèvi ak enfòmasyon konpayi nou an: Pati mòmon, mak ak Kantite.
Nou pral enspekte tout byen yo anvan chajman, asire tout pwodwi yo nan bon kondisyon epi asire ke pati yo se nouvo orijinalmatch fichye.
Apre tout machandiz yo asire pa gen okenn pwoblèm afterpacking, nou pral procesna san danje epi voye pa eksprime mondyal. Li exhibitsexcellent bon rezistans ak dlo ansanm ak entegrite bon sele.
Nou ka ofri sèvis livrezon atravè lemond eksprime, tankou DHLor FedEx oswa TNT oswa UPS oswa lòt komisè pou chajman.

Global Shipment pa DHL / FedEx / TNT / UPS

Frè anbak referans DHL / FedEx
1). Ou ka ofri eksprime kont livrezon ou pou chajman, si ou pa gen okenn kont eksprime pou chajman, nou ka ofri inadvance kont nou an.
2). Sèvi ak kont nou pou chajman, chaj chajman (Referans DHL / FedEx, diferan peyi gen pri diferan.)
Chaj chajman: (Referans DHL ak FedEx)
Pwa (KG): 0.00kg-1.00kg Pri (USD $): USD $ 60.00
Pwa (KG): 1.00kg-2.00kg Pri (USD $): USD $ 80.00
* Pri a nan pri a se referans ak DHL / FedEx. Chaj detay yo, tanpri kontakte nou. Diferan peyi chaj eksprime yo diferan.



IXFT30N50 Pwodwi Detay yo:

Title: All You Need to Know about IXFT30N50 MOSFET Transistors for Your Electronic Devices When it comes to electronic devices, the right components can make all the difference. One such component is the IXFT30N50 MOSFET transistor, a discrete semiconductor product that provides reliable and efficient power control for a wide range of applications. In this article, we'll take an in-depth look at IXFT30N50, its features, performance parameters, application scenarios, usage, and manufacturing process to help you understand how it can benefit your electronic devices. Features and Performance Parameters: The IXFT30N50 MOSFET transistor is a single N-channel MOSFET with a 500V voltage and 30A current capacity. Its TO268 package is designed for easy mounting and high thermal performance. The transistor also boasts several features that make it ideal for power control applications, including high-speed switching, low on-resistance, and low gate charge. In terms of performance parameters, the IXFT30N50 MOSFET transistor has an accuracy of +/-20V, efficiency of >90%, and a temperature range of -55°C to 175°C. Application Scenarios and Usage: The IXFT30N50 MOSFET transistor is widely used in power control applications across various industries such as telecommunications, computing, automotive, and industrial automation. It can be utilized in applications such as DC/DC converters, motor control, lighting systems, and more. The transistor's ruggedness, high voltage capability, and low on-resistance make it an excellent choice for high-frequency power switching circuits in these applications. Different Types of Integrated Circuits: There are several types of integrated circuits available today, including digital, analog, mixed-signal, and RF. Each type has its advantages and disadvantages, depending on the application. The IXFT30N50 MOSFET transistor is classified as a discrete semiconductor product and falls under the MOSFETs - Single category. Manufacturing Process: The IXFT30N50 MOSFET transistor undergoes a complex manufacturing process to ensure its quality and reliability. The process includes chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, and more. After these manufacturing steps, finished products need to undergo appropriate packaging and testing to ensure component quality. Conclusion: IXFT30N50 MOSFET transistor is an excellent choice for power control applications, and its ruggedness, high voltage capability, and low on-resistance make it a versatile component for various industries. It boasts several features, high-speed switching, low on-resistance, and low gate charge that make it ideal for DC/DC converters, motor control, lighting systems, and other high-frequency power switching circuits. Its complex manufacturing process also ensures its quality and reliability, making it an essential component for your electronic devices.

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