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IXFN80N50Q2

Hiersteller Part Number:
IXFN80N50Q2
Hiersteller / Mark
IXYS
Deel vun der Beschreiwung:
MOSFET N-CH 500V 72A SOT227B
Datebanken:
IXFN80N50Q2.pdf
Bleif Free Status / RoHS Status:
Stock Konditioun:
Nei Original, Liwwer verfügbar.
Schëff Vun:
Hong Kong
Liwwerung Way:
DHL/Fedex/TNT/UPS

Enquête Online

Fëllt all noutwendeg Felder mat Ärer Kontaktinformatioun of. Klickt "SUBMIT FROT"mir kontaktéieren Iech kuerz per E-Mail. Oder E-Mail eis: info@modules-igbt.com
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Part Number IXFN80N50Q2
Hiersteller / Mark IXYS
Kategorie Diskrete Semiconductor Products > Transistoren - FETs, MOSFET - Single
Beschreiwung MOSFET N-CH 500V 72A SOT227B
Bleif Free Status / RoHS Status: RoHS Compliant
Vgs (th) (Max) @ Id 4.5V @ 8mA
Vgs (Max) ±30V
Technologie MOSFET (Metal Oxide)
Supplier Device Package SOT-227B
Serie HiPerFET™, Q2 Class
Rds On (Max) @ Id, Vgs 60mOhm @ 500mA, 10V
Power Dissipation (Max) 890W (Tc)
Package / Case SOT-227-4, miniBLOC
Package protegéieren Tube
Operatioun Temperatur -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds 12800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V
FET Typ N-Channel
FET Feature -
Fuert Volt (Max Rds On, Min Rds On) 10V
Entworf fir Source Voltage (Vdss) 500 V
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C 72A (Tc)
Basis Produktnummer IXFN80

Verpackung

Mir bidden déi héchst Qualitéit, wirtschaftlechste Präisser fir statesch Schildverpackungen verfügbar. Mat 40% Liicht Transparenz ass et méiglech fir einfach Identifikatioun vun den IC (integréiert Circuiten) a PCB (Printcircuit Boards). Déi extrem haltbar begruewe Metallkonstruktioun gëtt FaradayCage Performance gebraucht fir effektiv dës Componenets géint statesch Charge ze schützen.

All d'Produkter ginn an Anti-Statikbeutel verpackt. Schëff mat ESD antistatesche Schutz.
Ausserhalb vum ESD Packing Label benotzt d'Informatioun vun eiser Firma: Deel Mummer, Brand a Quantitéit.
Mir wäerten all d'Wueren virun der Versandung inspizéieren, all d'Produkter an engem gudden Zoustand sécheren an dofir suergen, datt d'Deeler nei originalmatch Dateblatt sinn.
Nodeems all d'Wuere sécher keng Probleemer Afterpacking sinn, wäerte mir sécher packen a per global Express schécken. Et weist aussergewéinlech Punktur an Tréine-Widderstand zesumme mat enger gudder Dicht Integritéit.
Mir kënnen weltwäit Express-Liwwerservice ubidden, sou wéi DHLor FedEx oder TNT oder UPS oder aner Forwarder fir Sendung.

Global Sendung vum DHL / FedEx / TNT / UPS

Versandkäschten iwwer Referenz DHL / FedEx
1). Dir kënnt Ären Express Liwwerungskont fir de Versand offréieren, wann Dir keen express Kont fir Liwwerung hutt, kënne mir eise Konto inadvance ubidden.
2). Benotzt eise Kont fir d'Versand, Versandkäschten (Referenz DHL / FedEx, Verschidde Länner hu verschidde Präis.)
Versandkäschten : (Referenz DHL a FedEX)
Gewiicht (KG): 0,00 kg-1,00 kg Präis (USD $): USD $ 60.00
Gewiicht (KG): 1,00 kg -2,00 kg Präis (USD $): USD $ 80,00
* De Präis vum Käschte gëtt Referenz mat DHL / FedEx. D'Detailer Käschten, kontaktéiert eis. Verschidde Land d'Ausdréck Käschten sinn anescht.



IXFN80N50Q2 Produktdetailer:

IXFN80N50Q2: An Overview of this High-Power MOSFET The IXFN80N50Q2 is a high-power N-channel MOSFET that belongs to the Discrete Semiconductor Products category of MOSFETs. With its outstanding performance, it has quickly become a popular choice for professionals working across a wide range of industries. In this article, we'll delve deeper into the features and applications of this powerful device. Key Features and Performance Parameters The IXFN80N50Q2 boasts an output voltage of 500V and a maximum continuous drain current of 72A. This impressive power rating makes it ideal for use in high-power applications that require reliable and efficient performance. In addition, this MOSFET has a low Rds(on) rating, which means it has a minimal power dissipation and low thermal resistance. Application Scenarios and Usage Given its exceptional performance, the IXFN80N50Q2 can be used in a wide range of electronic devices and industries. It is commonly utilized in applications such as power supplies, switching regulators, motor control circuits, and inverters. Furthermore, it is an ideal choice for high-power amplifiers that require high-frequency response. Types of Integrated Circuits The IXFN80N50Q2 is a digital integrated circuit that utilizes MOSFET technology. Digital circuits operate on binary signals, whereas analog circuits operate on continuous signals. Mixed-signal circuits combine both analog and digital circuits, while RF circuits operate at radio frequencies. Manufacturing Process The manufacturing process of this MOSFET involves several stages, including chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, and more. This complex manufacturing process ensures that the device is consistent, reliable, and efficient. Packaging and Testing To ensure the quality and reliability of the finished product, the IXFN80N50Q2 undergoes appropriate packaging and testing. This ensures that the component is free from defects and operates reliably in its intended application. In conclusion, the IXFN80N50Q2 is a high-power MOSFET that delivers exceptional performance across a wide range of applications. With its low R_DS(on), high power rating, and reliable manufacturing process, it's no wonder why it has quickly become a go-to choice for professionals across a range of industries.

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