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IXTN17N120L

Stock Available Reference Price(In US Dollars)
1+
$45.08
10+
$42.34
100+
$38.66
Manufacturer Part Number:
IXTN17N120L
Manufacturer / Brand
IXYS
Part of Description:
MOSFET N-CH 1200V 15A SOT-227B
Datasheets:
IXTN17N120L.pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, Stock Available.
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number IXTN17N120L
Manufacturer / Brand IXYS
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1200V 15A SOT-227B
Lead Free Status / RoHS Status: ROHS3 Compliant
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-227B
Series Linear
Rds On (Max) @ Id, Vgs 900mOhm @ 8.5A, 20V
Power Dissipation (Max) 540W (Tc)
Package / Case SOT-227-4, miniBLOC
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds 8300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 15 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Base Product Number IXTN17

Packaging

We offer the highest quality, most economicallypriced static shield packaging available. With 40% light transparency, itallows for easy identification of IC's (integrated circuits) and PCB's (printedcircuit boards). The extremely durable buried metal contruction gives FaradayCage performance needed to effectively shield these componenets against staticcharge.

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



IXTN17N120L Product Details:

Title: IXTN17N120L MOSFET N-CH 1200V 15A SOT-227B: Features, Applications, and Manufacturing Process Introduction: The IXTN17N120L is a high power field-effect transistor (MOSFET) that is widely used in various applications for different electronic devices. In this article, we will provide an overview of the features, application scenarios, usage, and manufacturing process of IXTN17N120L to highlight its importance and usefulness in the semiconductor industry. Features: The IXTN17N120L MOSFET is classified as a discrete semiconductor product that comes with several unique features, including a high voltage of 1200V, a current rating of 15A, and a low on-state resistance. It also features a compact SOT-227B package that allows easy integration into different devices. This MOSFET delivers exceptional performance with efficiency, stability, and fast switching times. It can operate over a wide temperature range of -55°C to 150°C, making it suitable for harsh industrial environments. Application Scenarios: The IXTN17N120L MOSFET can be used in various industrial applications, including telecoms, power supplies, motor control, and welding equipment. It is perfect for devices that require high power output and precision in voltage and current regulations. This MOSFET can enhance the performance of power conversion circuits by providing better efficiency and reliability. Usage: This MOSFET is compatible with different types of integrated circuits like digital, analog, mixed-signal, and RF. It delivers exceptional performance by regulating the flow of current in electronic devices. It is also suitable for high-speed switching in applications that require fast response times. Manufacturing Process: The IXTN17N120L MOSFET is manufactured through a series of complex processes that include chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, and more. It undergoes rigorous quality control and testing procedures to ensure component reliability and integrity. Finished products are packaged appropriately with all necessary markings and certifications. Conclusion: In conclusion, the IXTN17N120L MOSFET is a high-performance semiconductor device that deserves attention due to its exceptional features, application scenarios, and complex manufacturing process. It is essential to highlight the importance of this MOSFET in different industries and electronic devices. Its use can enhance the functionality of electronic devices, and it delivers excellent performance with efficiency, stability, and reliability.

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